(China (Mainland))
Product Summary
The IS61C1024AL-12JLI is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices.
Parametrics
IS61C1024AL-12JLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5 to +7.0 V; (2)Storage Temperature:–65 to +150℃; (3)Power Dissipation: 1.5 W; (4)DC Output Current (LOW): 20 mA.
Features
IS61C1024AL-12JLI features: (1)High-speed access time: 12, 15 ns; (2)Low active power: 160 mW (typical); (3)Low standby power: 1000 μW (typical) CMOS standby; (4)Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications; (5)Fully static operation: no clock or refresh required; (6)TTL compatible inputs and outputs; (7)Single 5V (±10%) power supply; (8)Commercial, industrial, and automotive temperature ranges available; (9)Lead free available.
Diagrams
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 IS61C1024AL-12JLI |
ISSI |
SRAM 1Mb 128Kx8 12ns 5v Async SRAM |
Data Sheet |
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IS61C1024AL-12JLI-TR |
ISSI |
SRAM 1Mb 128Kx8 12ns 5v Async SRAM |
Data Sheet |
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