(China (Mainland))
Product Summary
The ISSI IS61WV102416BLL-10 is a high-speed, 16M-bit static RAM organized as 1024K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The IS61WV102416BLL-10 is packaged in the JEDEC standard 48-pin TSOP Type I and 48-pin Mini BGA (9mm x 11mm).
Parametrics
IS61WV102416BLL-10 absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5 V; (2)VDD, VDD Relates to GND: –0.3 to 4.0 V; (3)TSTG, Storage Temperature: –65 to +150 ℃; (4)PT, Power Dissipation: 1.0 W.
Features
IS61WV102416BLL-10 features: (1)High-speed access times: 8, 10, 20 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single power supply: VDD 1.65V to 2.2V (IS61WV102416ALL) speed = 20ns for VDD 1.65V to 2.2V; VDD 2.4V to 3.6V (IS61/64WV102416BLL): speed = 10ns for VDD 2.4V to 3.6V; speed = 8ns for VDD 3.3V + 5%; (9)Packages available: 48-ball miniBGA (9mm x 11mm); 48-pin TSOP (Type I); (10)Industrial and Automotive Temperature Support; (11)Lead-free available; (12)Data control for upper and lower bytes.
Diagrams
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 IS61WV102416BLL-10MI |
ISSI |
SRAM 16M (1Mx16) 8ns 3.3V Async SRAM 3.3v |
Data Sheet |
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IS61WV102416BLL-10MI-TR |
ISSI |
SRAM 16M (1Mx16) 8ns 3.3V Async SRAM 3.3v |
Data Sheet |
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IS61WV102416BLL-10TLI |
ISSI |
SRAM 16M (1Mx16) 10ns Async SRAM 3.3v |
Data Sheet |
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IS61WV102416BLL-10MLI |
ISSI |
SRAM 16Mb 1Mbx16 8ns 3.3V Async SRAM 3.3v |
Data Sheet |
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IS61WV102416BLL-10MLI-TR |
ISSI |
SRAM 16Mb 1Mbx16 8ns 3.3V Async SRAM 3.3v |
Data Sheet |
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IS61WV102416BLL-10TLI-TR |
ISSI |
SRAM 16M (1Mx16) 10ns Async SRAM 3.3v |
Data Sheet |
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