Product Summary

The M28W320CT-70ZB6T is a 32Mbit Low Voltage Flash Memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. The M28W320CT-70ZB6T is offered in the TSOP48 (10 x 20mm) and the mBGA47, 0.75mm ball pitch packages. When shipped, all bits of the M28W320CT-70ZB6T are in the 1 state.

Parametrics

M28W320CT-70ZB6T absolute maximum ratings: (1)TA Ambient Operating Temperature:–40 to 85℃; (2)TBIAS Temperature Under Bias:–40 to 125℃; (3)TSTG Storage Temperature:–55 to 155℃; (4)VIO Input or Output Voltage: –0.6 to VDDQ+0.6V; (5)VDD, VDDQ Supply Voltage: –0.6 to 4.1V; (6)VPP Program Voltage:–0.6 to 13 V.

Features

M28W320CT-70ZB6T features: (1)supply voltage: VDD = 2.7V to 3.6V: for Program, Erase and; (2)read; VDDQ = 1.65V or 2.7V: Input/Output option; VPP = 12V: optional Supply Voltage for fast Program; (3)access time: 2.7V to 3.6V: 90ns; 2.7V to 3.6V: 100ns; (4)programming time: 10ms typical, Double Word Programming Option; (5)program/erase controller (P/E.C.); (6)common flash interface; (7)memory blocks; (8)block protection unprotection; (9)64-bit user Programmable OTP cells; (10)64-bit unique device identifier; (11)One Parameter Block Permanently Lockable; (12)automatic stand-by mode; (13)program and erase suspend; (14)100,000 program/erase cycles per block; (15)20 years of data retention; (16)Defectivity below 1ppm/year; (17)electronic signature; (18)Manufacturer Code: 20h; (19)Top Device Code, M28W320CT: 88BAh; (20)Bottom Device Code, M28W320CB: 88BBh.

Diagrams

M28W320CT-70ZB6T block diagram

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