Product Summary

The NM27C010V-200 is a high performance, 1,048,576-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 128K-words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through 8 Mbit EPROMs. The NM27C010V-200 can directly replace lower density 28-pin EPROMs by adding an A16 address line and VCC jumper. The NM27C010V-200 provides microprocessor-based systems extensive storage capacity for large portions of operating system and application software. Its 70 ns access time provides no-wait-state operation with high-performance CPUs.

Parametrics

NM27C010V-200 absolute maximum ratings: (1)Storage Temperature:-65℃ to +150℃; (2)All Input Voltages Except A9 with Respect to Ground:-0.6V to +7V; (3)VPP and A9 with Respect to Ground:-0.6V to +14V; (4)VCC Supply Voltage with Respect to Ground:-0.6V to +7V; (5)ESD Protection:>2000V.

Features

NM27C010V-200 features: (1)High performance CMOS:70 ns access time; (2)Fast turn-off for microprocessor compatibility; (3)Simplified upgrade path: VPP and PGM are “Don’t Care” during normal read operation; (4)Manufacturers identification code; (5)Fast programming; (6)JEDEC standard pin configurations: 32-pin PDIP package, 32-pin PLCC package, 32-pin CERDIP package.

Diagrams

NM27C010V-200 block diagram

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Data Sheet

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