Product Summary
The 2SC5200 is a TOSHIBA transistor of silicon NPN triple diffused type.
Parametrics
2SC5200 absolute maximum ratings: (1)Collector-base voltage, VCBO: 230V; (2)Collector-emitter voltage, VCEO: 230V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 15A; (5)Base current, IB: 1.5A; (6)Collector power dissipation(Tc = 25℃), PC: 150W; (7)Junction temperature, Tj: 150℃; (8)Storage temperature range, Tstg: -55 to 150℃.
Features
2SC5200 features: (1)High Current Capability; (2)High Power Dissipation; (3)High Collector-Emitter Breakdown Voltage: V(BR)CEO= 230V(Min); (4)Complement to Type 2SA1943.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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2SC5200 |
STMicroelectronics |
Transistors Bipolar (BJT) 230V High Power NPN 30 MHz Audio Pwr App |
Data Sheet |
Negotiable |
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2SC5200-O |
TRANS NPN 230V 15A TO-3PL |
Data Sheet |
Negotiable |
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2SC5200OTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN 230V 15A 150W |
Data Sheet |
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2SC5200-O(Q) |
Toshiba |
Transistors Bipolar (BJT) NPN 230V 15A |
Data Sheet |
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2SC5200RTU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN 230V 15A 150W |
Data Sheet |
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2SC5200-R(Q) |
Toshiba |
Transistors Bipolar (BJT) Transistor NPN 230V 15A |
Data Sheet |
Negotiable |
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