Product Summary
The 2SK1299L is a Silicon N-Channel MOSFET. The application of the 2SK1299L is High speed power switching.
Parametrics
2SK1299L absolute maximum ratings: (1)Drain to source voltage VDSS: 100V; (2)Gate to source voltage VGSS: ±20V; (3)Drain current ID: 3A; (4)Drain peak current ID(pulse): 12A; (5)Body to drain diode reverse drain current IDR: 3A; (6)Channel dissipation Pch: 20W; (7)Channel temperature Tch: 150℃; (8)Storage temperature Tstg: –55℃ to +150℃.
Features
2SK1299L features: (1)Low on-resistance; (2)High speed switching; (3)Low drive current; (4)4 V gate drive device: Can be driven from 5 V source; (5)Suitable for motor drive, DC-DC converter, power switch and solenoid drive.
Diagrams
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![]() 2SK1062 |
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