Product Summary
The EL817(A)-F is a 4 pin DIP phototransistor. The device consists of an infrared emitting diodes, optically coupled to a phototransistor detector. The EL817(A)-F is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. The applications of the EL817(A)-F include Programmable controllers, System appliances, measuring instruments, Telecommunication equipments, Home appliances, such as fan heaters, etc and Signal transmission between circuits of different potentials and impedances.
Parametrics
EL817(A)-F absolute maximum ratings: (1)input, Forward current, IF: 60 mA; Peak forward current (1us, pulse), IFP: 1 A; Reverse voltage, VR: 6 V; Power dissipation Derating factor ( aboveTa = 100℃), PD: 100 mW; 2.9 mW/℃; (2)output, Power dissipation Derating factor (above Ta = 100℃), PC: 150 mW; 5.8 mW/℃; Collector current, IC: 50 mA; Collector-Emitter voltage, VCEO: 35 V; Emitter-Collector voltage, VECO: 6 V; (3)Total power dissipation, PTOT: 200 mW; (4)Isolation voltage, VISO: 5000 V rms; (5)Operating temperature, TOPR: -55 to +110℃; (6)Storage temperature, TSTG: -55 to +125℃; (7)Soldering temperature, TSOL: 260℃.
Features
EL817(A)-F features: (1)Current transfer ratio (CTR: 50to 600% at IF =5mA, VCE =5V); (2)High isolation voltage between input and output (Viso=5000 V rms ); (3)Creepage distance >7.62 mm; (4)Operating temperature up to +110℃; (5)Compact small outline package; (6)Pb free and RoHS compliant; (7)UL approved (No. E214129); (8)VDE approved (No. 132249); (9)SEMKO approved (No. 716108); (10)NEMKO approved (No. P08209467); (11)DEMKO approved (No. 314683); (12)FIMKO approved (No. FI 224433); (13)CSA approved (No. 1143601).
Diagrams
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EL8100ISZ |
IC OP AMP 200MHZ R-R 8-SOIC |
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EL8100ISZ-T13 |
IC AMP SGL R-R 200MHZ 8-SOIC |
Data Sheet |
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