IRFZ44N

TO220, N-CH, 55V, 49A, TO-220AB, HEXFET Power MOSFET, International Rectifier

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Price:: US $0.15~0.30 / piece [Get Latest Price]

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	US $0.15~0.30

PartNumber:: IRFZ44N

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-08-19

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Part Number:IRFZ44N
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Product Summary

The IRFZ44N Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized the device design that HEXFET power MOSFET IRFZ44N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRFZ44N absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 49 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 35 A; (3)IDM Pulsed Drain Current: 160 A; (4)PD @TC = 25℃ Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ± 20 V; (7)Avalanche Current: 25 A; (8)Repetitive Avalanche Energy: 9.4 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃.

Features

IRFZ44N features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.