FGA25N120

proprietary trench design, 1200V NPT IGBT, advanced NPT technology, 1200V, 50A, TO-3P

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Price:: US $2.00~3.00 / piece [Get Latest Price]

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	US $2.00~3.00

PartNumber:: FGA25N120

Brand:: Fairchild Semiconductor - Fairchild | Pack: TO | D/C: 07+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-08-28

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Part Number:FGA25N120
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Product Summary

Using Fairchild’s proprietary trench design and advanced NPT technology, the 1200V NPT IGBT FGA25N120 offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. The FGA25N120 is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.

Parametrics

FGA25N120 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 1200V; (2)Gate-Emitter Voltage, VGES: ±20V; (3)Collector Current @ TC = 25℃, IC: 50A; (4)Collector Current @ TC = 100℃, IC: 25A; (5)Pulsed Collector Current, ICM: 90A; (6)Diode Continuous Forward Current @ TC = 100℃, IF: 25A; (7)Diode Maximum Forward Current, IFM: 150A; (8)Maximum Power Dissipation @ TC = 25℃, PD: 312W; (9)Maximum Power Dissipation @ TC = 100℃, PD: 125W; (10)Operating Junction Temperature, TJ: -55 to +150℃; (11)Storage Temperature Range, Tstg: -55 to +150℃.

Features

FGA25N120 features: (1)NPT Trench Technology, Positive temperature coefficient; (2)Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25℃; (3)Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25℃; (4)Extremely enhanced avalanche capability.