IRF840

Power MOSFET, N-Chan, 500V, 8.0 Amp, TO-220AB, Vishay Siliconix

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Price:: US $2.00~5.00 / piece [Get Latest Price]

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	US $2.00~5.00

PartNumber:: IRF840

Brand:: Vishay Siliconix - vishay | Pack: TO | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
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Products Upload time: 2011-08-19

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Part Number:IRF840
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Product Summary

Third generation Power MOSFET IRF840 from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package of the IRF840 is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Parametrics

IRF840 absolute maximum ratings: (1)Drain-Source Voltage: 500 V; (2)Gate-Source Voltage: ± 20 V; (3)Continuous Drain Current VGS at 10 V: 8.0 A at TC = 25 ℃, 5.1 A at TC = 100 ℃; (4)Pulsed Drain Current: 32 A; (5)Linear Derating Factor: 1.0 W/℃; (6)Single Pulse Avalanche Energy : 510 mJ; (7)Repetitive Avalanche Current a: 8.0 A; (8)Repetitive Avalanche Energy : 13 mJ; (9)Maximum Power Dissipation at TC = 25 ℃: 125 W; (10)Peak Diode Recovery dV/dt: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (12)Soldering Recommendations (Peak Temperature) for 10 s: 300 ℃; (13)Mounting Torque at 6-32 or M3 screw:10 lbf · in; 1.1 N · m.

Features

IRF840 features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.