(China (Mainland))
Product Summary
The IS61LV5128AL-10KLI is a very high-speed, low power, 524,288-word by 8-bit CMOS static RAM. The IS61LV5128AL-10KLI is fabricated using ISSI’s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the IS61LV5128AL-10KLI assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) with CMOS input levels. The device operates from a single 3.3V power supply and all inputs are TTL-compatible. The IS61LV5128AL-10KLI is available in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin TSOP (Type II) packages.
Parametrics
IS61LV5128AL-10KLI absolute maximum ratings: (1)Terminal Voltage with Respect to GND:–0.5V to VDD+0.5V; (2)Storage Temperature:–65℃ to +150℃; (3)Power Dissipation:1.0W.
Features
IS61LV5128AL-10KLI features: (1)High-speed access times: 10, 12 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply; (9)Packages available: 36-pin 400-mil SOJ, 36-pin miniBGA, 44-pin TSOP (Type II); (10)Lead-free available.
Diagrams
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 IS61LV5128AL-10KLI |
ISSI |
SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v |
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IS61LV5128AL-10KLI-TR |
ISSI |
SRAM 4Mb 512Kx8 10ns Async SRAM 3.3v |
Data Sheet |
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