(China (Mainland))
Product Summary
The 2MBI75N060 is an IGBT MODULE ( N series ).
Parametrics
2MBI75N060 absolute maximum ratings: (1)Collector Emitter Voltage VCES: 600 V; (2)Gate Emitter Voltage VGES: ± 20 V; (3)Collector Current: Continuous IC: 75A; 1ms IC PULSE: 150A; Continuous -IC 75A; 1ms -IC PULSE 150A; (4)Max. Power Dissipation PC: 320 W; (5)Operating Temperature Tj: +150 ℃; (6)Storage Temperature Tstg: -40 to +125 ℃; (7)Isolation Voltage A.C. 1min. Vis: 2500 V.
Features
2MBI75N060 features: (1)Square RBSOA; (2)Low Saturation Voltage; (3)Less Total Power Dissipation; (4)Improved FWD Characteristic; (5)Minimized Internal Stray Inductance; (6)Overcurrent Limiting Function (~3 Times Rated Current).
Diagrams
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 2MBI100N-060-03 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NB-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NC-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100NE-120 |
Other |
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Data Sheet |
Negotiable |
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2MBI100P-140 |
Other |
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Data Sheet |
Negotiable |
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2MBI100PC-140 |
Other |
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Data Sheet |
Negotiable |
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