(China (Mainland))
Product Summary
The BLW50F is an NPN silicon RF power transistor. It is designed for use in transmitters in the HF and VHF band applications up tp 30 MHz.
Parametrics
BLW50F absolute maximum ratings: (1)IC: 3.25 A; (2)VCBO: 110 V; (3)VCEO: 55 V; (4)VEBO: 4.0 V; (5)PDISS: 87 W @ TC = 25 ℃; (6)TJ: -65 ℃ to +200 ℃; (7)TSTG: -65 ℃ to +150 ℃; (8)θJC: 2.0 ℃/W.
Features
BLW50F features: (1)PG = 14 dB min. at 75 W/30 MHz; (2)IMD3 = 50 dBc max. at 75 W(PEP); (3)Omnigold Metalization System.
Diagrams
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 BLW50F |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
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| Image | Part No | Mfg | Description | |
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BLW50F |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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