Product Summary

The C5296 is a NPN triple diffused planar silicon transistor designed for Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications.

Parametrics

C5296 absolute maximum ratings: (1)VCBO, Collector-Base Voltage Open emitter: 1500 V ; (2)VCEO, Collector-Emitter Voltage Open base: 800 V ; (3)VEBO, Emitter-Base Voltage Open collector: 6 V ; (4)IC, Collector Current: 8 A ; (5)ICM, Collector current-peak: 16; (6)PC, Collector dissipation: 3w; 60 W at TC=25℃; (7)Tj, Junction Temperature: 150 ℃ ; (8)Tstg, Storage Temperature Range: -55~150 ℃.

Features

C5296 features: (1)High breakdown voltage: VCBO=1500v; (2)high reliability(adoption of HVP process); (3)High speed:tr=100ns; (4)adoption of MBIT process; (5)on-chip damper diode.

Diagrams

C5296 switching time test circuit