(China (Mainland))
Product Summary
The G28F008S3120 is a byte-wide Smart 3 FlashFile memory. It provides density upgrades with pinout compatibility for the 4-, 8-, and 16-Mbit densities. The G28F008S3120 is a high-performance memory arranged as 512 Kbyte, 1 Mbyte, and 2 Mbyte of eight bits. SmartVoltage technology enables fast factory programming and low power designs. Specifically designed for 3 V systems, the G28F008S3120 supports read operations at 2.7 V and 3.3 V VCC and block erase and program operations at 2.7 V, 3.3 V and 12 V VPP.
Parametrics
G28F008S3120 absolute maximum ratings: (1)Temperature under Bias:–10℃ to +80℃; (2)Storage Temperature:–65℃ to +125℃; (3)Voltage On Any Pin(except VPP, and RP#):–2.0 V to +7.0 V; (4)VPP Voltage:–2.0 V to +14.0 V; (5)RP# Voltage:–2.0 V to +14.0 V; (6)Output Short Circuit Current:100 mA.
Features
G28F008S3120 features: (1)SmartVoltage Technology: Smart 3 Flash: 2.7V or 3.3V VCC and 2.7V, 3.3V or 12V VPP; (2)High-Performance:120 ns Read Access Time; (3)Enhanced Data Protection Features:Absolute Protection with VPP = GND, Flexible Block Locking, Block Write Lockout during Power Transitions; (4)Enhanced Automated Suspend Options: Program Suspend to Read, Block Erase Suspend to Program, Block Erase Suspend to Read; (5)Industry-Standard Packaging: 40-Lead TSOP, 44-Lead PSOP and 40 Bump μBGA* CSP; (6)High-Density 64-Kbyte Symmetrical Erase Block Architecture: 4 Mbit: Eight Blocks, 8 Mbit: Sixteen Blocks, 16 Mbit: Thirty-Two Blocks; (7)Extended Cycling Capability: 100,000 Block Erase Cycles; (8)Low Power Management: Deep Power-Down Mode; (9)Automatic Power Savings Mode, Decreases ICC in Static Mode; (10)Automated Program and Block Erase: Command User Interface, Status Register; (11)SRAM-Compatible Write Interface; (12)ETOX V Nonvolatile Flash Technology.
Diagrams
