(China (Mainland))
Product Summary
The IRFP250N is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET IRFP250N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRFP250N absolute maxing ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 30A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 21 A; (3)IDM Pulsed Drain Current: 120A; (4)PD @ TC = 25℃ Power Dissipation: 214W; (5)Linear Derating Factor: 1.4 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 315mJ; (8)IAR Avalanche Current: 30A; (9)EAR Repetitive Avalanche Energy: 21mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.6V/ns.
Features
IRFP250N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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 IRFP250N |
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Data Sheet |
Negotiable |
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IRFP250NPBF |
International Rectifier |
MOSFET MOSFT 200V 30A 75mOhm 82nCAC |
Data Sheet |
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