(China (Mainland))
Product Summary
The IRFR120NTRPBF is a fifth generation HEXFET from international rectifier. The IRFR120NTRPBF utilizes advance processing techniques to achieve the lowest possible on-resistance per silicon area. This benifit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
Parametrics
IRFR120NTRPBF absolute maximum ratings: (1)ID@TC=25℃, continuous, VGS@10V: 9.4A; (2)ID@TC=100℃, continuous drain current, VGS@10V: 6.6A; (3)IDM, pulsed drain current: 3.8A; (4)PD@TC=25℃, power dissipation: 48W; (5)linear derating factor: 0.32W/℃; (6)VGS, gate-to-source voltage: ±20V; (7)EAS, single pulse avalanche energy: 91mJ; (8)IAR, avalanche current: 5.7A; (9)EAR, repetitive avalanche energy: 4.8mJ; (10)dv/dt, peak diode recovery dv/dt: 5.0V/ns; (11)Tj, Tstg, operating junction and storage temperature range: -55 to 175℃; (12)soldering temperature, for 10 seconds: 300℃.
Features
IRFR120NTRPBF features: (1)surface mount; (2)straight lead; (3)advance process technology; (4)fast switching; (5)fully avalanche rated; (6)lead-free.
Diagrams
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 IRFR120NTRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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