Product Summary

The NE5537 monolithic sample-and-hold amplifier combines the best features of ion-implanted JFETs with bipolar devices to obtain high accuracy, fast acquisition time, and low droop rate. This device is pin-compatible with the LF198, and features superior performance in droop rate and output drive capability. The differential logic threshold is 1.4V with the sample mode occurring when the logic input is high. It is available in 8-lead TO-5, 8-pin plastic DIP packages, and 14-pin SO packages.

Parametrics

NE5537 absolute maximum ratings: (1)Voltage supply:±18 V; (2)Maximum power dissipation:N package:1160 mW;D package:1090 mW;FE package:780 mW; (3)Operating ambient temperature range:0 to +70 °C; (4)Storage temperature range: -65 to +150 °C; (5)VIN Input voltage :Equal to supply voltage; (6)Logic to logic reference differential voltage:-30 to 7V; (7)Hold capacitor short circuit duration :10 s; (8)TSOLD Lead soldering temperature (10sec max): 300 °C.

Features

NE5537 features: (1)Operates from ±5V to ±18V supplies; (2)Hold leakage current 6pA; (3)Less than 4μs acquisition time; (4)TTL, PMOS, CMOS compatible logic input; (5)0.5mV typical hold step at CH=0.01μF; (6)Low input offset: 1MV (typical); (7)0.002% gain accuracy with RL=2kΩ; (8)Low output noise in hold mode; (9)Input characteristics do not change during hold mode; (10)High supply rejection ratio in sample or hold; (11)Wide bandwidth.

Diagrams

NE5537 Pin Configuration

NE5500179A
NE5500179A

Other


Data Sheet

Negotiable 
NE5500234-AZ
NE5500234-AZ


MOSFET LD N-CH 4.8V 400MA SOT89

Data Sheet

0-39: $1.74
NE5500234-T1-AZ
NE5500234-T1-AZ


MOSFET LD N-CH 4.8V 400MA SOT89

Data Sheet

0-1000: $0.84
NE5510179A
NE5510179A

Other


Data Sheet

Negotiable 
NE5510279A
NE5510279A

Other


Data Sheet

Negotiable 
NE5511279A
NE5511279A

NEC/CEL

Transistors RF MOSFET Power RO 551-NE5511279A-A

Data Sheet

Negotiable