STD5NK50Z

Power MOSFET, 500 V, 17.6A, 1.22 Ω, extremely high dv/dt capability, avalanche tested

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Price:: US $0.20~0.50 / piece [Get Latest Price]

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PartNumber:: STD5NK50Z

Brand:: STMicroelectronics - ST | Pack: DIP | D/C: 11+

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Products Upload time: 2011-12-01

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Part Number:STD5NK50Z
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Product Summary

The STD5NK50Z is a Power MOSFET. The STD5NK50Z is obtained through an extreme optimization of ST’s well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The STD5NK50Z is suitable for high current, high speed switching, ideal for off-line power supplies, adaptors and pfc and lighting.

Parametrics

STD5NK50Z absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 500 V; (2)VDGR, Drain-gate Voltage (RGS =20kΩ): 500 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 4.4A; (5)ID, Drain Current (continuous) at TC = 100℃: 2.7A; (6)IDM, Drain Current (pulsed): 17.6A; (7)PTOT, Total Dissipation at TC = 25℃: 70W; (8)Derating Factor: 0.56 W/℃; (9)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 3000 V; (10)dv/dt, Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Tj,Tstg, Operating Junction Temperature and Storage Temperature: -55to150℃.

Features

STD5NK50Z features: (1)typical RDS(on) = 1.22 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.