(China (Mainland))
Product Summary
The AN5836 fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET AN5836 is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package of the AN5836 is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parametrics
AN5836 absolute maximum ratings: (1)ID @ TC = 25℃ at Continuous Drain Current, VGS @ 10V: 42A max; (2)ID @ TC = 100℃ at Continuous Drain Current, VGS @ 10V: 30 A max; (3)IDM, Pulsed Drain Current:140A max; (4)PD @TC = 25℃, Power Dissipation: 160 W; (5)Linear Derating Factor: 1.1 W/℃; (6)VGS, Gate-to-Source Voltage: ± 20 V; (7)EAS, Single Pulse Avalanche Energy: 420 mJ; (8)IAR, Avalanche Current: 22 A; (9)EAR, Repetitive Avalanche Energy: 16 mJ; (10)dv/dt, Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m)℃.
Features
AN5836 features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated.
Diagrams
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AN5860 |
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