GE28F800B3BA90

GE28F800B3BA90, 3 Volt, Advanced Boot Block Flash Memory, UBGA46, 100mA, -0.5V to +3.7V

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PartNumber:: GE28F800B3BA90

Brand:: Intel Corporation - Intel | Pack: DIP | D/C: 00+

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Products Upload time: 2012-07-11

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Product Summary

The GE28F800B3BA90 is a 3 Volt Advanced Boot Block Flash Memory. Intel provides the most flexible voltage solution in the flash industry, providing three discrete voltage supply pins: VCC for read operation, VCCQ for output swing, and VPP for program and erase operation. The GE28F800B3BA90 provides program/erase capability at 2.7 V or 12 V (for fast production programming) and read with VCC at 2.7 V. Since many designs read from the flash memory a large percentage of the time, 2.7 V VCC operation can provide substantial power savings.

Parametrics

GE28F800B3BA90 absolute maximum ratings: (1)Extended Operating Temperature During Read: –40℃ to +85℃; (2)During Block Erase and Program: –40℃ to +85℃; (3)Temperature under Bias: –40℃ to +85℃; (4)Storage Temperature: –65℃ to +125℃; (5)Voltage On Any Pin (except VCC, VCCQ and VPP) with Respect to GND: –0.5 V to +3.7 V; (6)VPP Voltage (for Block Erase and Program) with Respect to GND: –0.5 V to +13.5 V; (7)VCC and VCCQ Supply Voltage with Respect to GND:–0.2V to +3.7V; (8)Output Short Circuit Current: 100mA.

Features

GE28F800B3BA90 features: (1)Flexible Smart Voltage Technology; (2)2.7 V or 1.65 V I/O Option; (3)High Performance; (4)Optimized Block Sizes; (5)Block Locking; (6)Low Power Consumption; (7)Absolute Hardware-Protection; (8)Extended Temperature Operation: -40℃ to 85℃; (9)Automated Program and Block Erase; (10)Intel Flash Data Integrator Software; (11)Extended Cycling Capability; (12)Automatic Power Savings Feature; (13)Standard Surface Mount Packaging; (14)Density and Footprint Upgradeable for common package; (15)ETOX VII (0.18 m) Flash Technology; (16)x8 not recommended for new designs; (17)4-Mbit density not recommended for new designs.