(China (Mainland))
Product Summary
The PSMN040-200W is a kind of N-channel TrenchMOS transistor, which use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating. The PSMN040-200W is supplied in the SOT429 (TO247) conventional leaded package. It is widely used in d.c. to d.c. converters and switched mode power supplies.
Parametrics
PSMN040-200W absolute maximum ratings: (1)VDSS, Drain-source voltage Tj = 25℃ to 175℃: 200 V; (2)VDGR, Drain-gate voltage Tj = 25℃ to 175℃; RGS = 20 kΩ: 200 V; (3)VGS, Gate-source voltage: ± 20 V; (4)ID, Continuous drain current Tmb = 25℃: 50 A; Tmb = 100℃: 36 A; (5)IDM, Pulsed drain current Tmb = 25℃: 200 A; (6)PD, Total power dissipation Tmb = 25℃: 300 W; (7)Tj, Tstg Operating junction and storage temperature: - 55 to 175℃.
Features
PSMN040-200W features: (1)Trench technology; (2)Very low on-state resistance VDSS = 200 V; (3)Fast switching; (4)Low thermal resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 PSMN040-200W |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
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PSMN040-200W,127 |
NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Data Sheet |
Negotiable |
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