(China (Mainland))
Product Summary
The 2N3866 is a Silicon NPN RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and oscillator applications.
Parametrics
2N3866 absolute maximum ratings: (1)Collector-Base Voltage, VCBO: 55V; (2)Collector-Emitter Voltage, VCEO: 30V; (3)Emitter-Base Voltage, VEBO: 3.5V; (4)Collector Current, IC: 0.4A; (5)Base Current, IB: 2.0A; (6)Power Dissipation (TC=25℃), PD: 5.0W; (7)Operating and Storage Junction Temperature, TJ,Tstg: -65 to +200 ℃; (8)Thermal Resistance, θJC: 35℃/W.
Features
2N3866 features: (1)Silicon NPN, To-39 packaged VHF/UHF Transistor; (2)Specified 400 MHz, 28Vdc Characteristics: Output Power = 1.0 Watt; Minimum Gain = 10 dB; Efficiency = 45%; (3)800 MHz Current-Gain Bandwidth Product.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 2N3866 |
Central Semiconductor |
Transistors Bipolar (BJT) NPN VHF/UHF AM |
Data Sheet |
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2N3866A |
Other |
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Data Sheet |
Negotiable |
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2N3866AUB |
Other |
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Data Sheet |
Negotiable |
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2N3866UB |
Other |
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Data Sheet |
Negotiable |
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