Product Summary
The FGH60N60SMD is a 600V, 60A Field Stop IGBT. It offers the optimum performance for Solar Inverter, UPS, SMPS, IH and PFC applications where low conduction and switching losses are essential. The FGH60N60SMD is used in Solar Inverter, UPS, SMPS, PFC; Induction Heating.
Parametrics
FGH60N60SMD absolute maximum ratings: (1)VCES Collector to Emitter Voltage: 600V; (2)VGES Gate to Emitter Voltage: ±20V; (3)IC Collector Current: 120A @ TC = 25℃; 60A @ TC = 100℃; (4)ICM Pulsed Collector Current: 180A; (5)IF Diode Forward Current: 60A @ TC = 25℃; 30A @ TC = 100℃; (6)IFM Pulsed Diode Maximum Forward Current: 180A; (7)PD Maximum Power Dissipation: 600W @ TC = 25℃; 300W @ TC = 100℃; (8)TJ Operating Junction Temperature: -55 to +175℃; (9)Tstg Storage Temperature Range: -55 to +175℃; (10)TL Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds: 300℃.
Features
FGH60N60SMD features: (1)Maximum Junction Temperature : TJ =175℃; (2)Positive Temperaure Co-efficient for easy parallel operating; (3)High current capability; (4)Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 60A; (5)High input impedance; (6)Fast switching; (7)Tighten Parameter Distribution; (8)RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FGH60N60SMD |
Fairchild Semiconductor |
IGBT Transistors 600V/60A Field Stop IGBT ver. 2 |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FGH60N60SF |
Other |
Data Sheet |
Negotiable |
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FGH60N60SFD |
Other |
Data Sheet |
Negotiable |
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FGH60N60SFDTU |
Fairchild Semiconductor |
IGBT Transistors N-Ch/ 60A 600V FS |
Data Sheet |
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FGH60N60SFTU |
Fairchild Semiconductor |
IGBT Transistors N-CH / 600V 60A/ FS |
Data Sheet |
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FGH60N60SMD |
Fairchild Semiconductor |
IGBT Transistors 600V/60A Field Stop IGBT ver. 2 |
Data Sheet |
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FGH60N60UFD |
Other |
Data Sheet |
Negotiable |
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